碩士 / 國立中興大學 / 電機工程學系所 / 106 / Fin Field Effect Transistors (FinFET) and nanowire transistors are two potential device structures of next-generation transistors for 5-3 nm technology nodes to effectively suppress short channel effect and continuously miniaturize transistor devices. Therefore, this study focuses on the application of silicon and germanium as the channel materials to the device structures of above two transistors to calculate carrier mobility in inversion layer as well as the stress response. The mobility stress response model (piezoresistance model) which could rapidly and accurately predict the changes of carrier mobility under different stress conditions is proposed.
Vienna Schrödinger Poisson (VSP) package considering the quantum effect in Global TCAD Solution (GTS) is utilized for simulating FinFETs with different channel widths and circle, square, and triangle nanowire transistors with various diameters or perimeters as well as applying stress on carrier mobility at [110] channel direction to obtain the response factor of the mobility stress response model. The difference between the model and other models is further discussed. This study could help comprehend the importance of strain engineering to the advanced CMOS nano-device design in the future.
| Identifer | oai:union.ndltd.org:TW/106NCHU5441063 |
| Date | January 2018 |
| Creators | Tzu-Ling Hung, 洪子玲 |
| Contributors | 張書通 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 89 |
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