碩士 / 國立東華大學 / 電機工程學系 / 106 / In this thesis, we simulate the effects of source/drain extension (SDE) of 7-nm FinFET and its random dopant fluctuations (RDF). First, we change the length and doping concentration of the SDE to observe their effects on the device characteristics. Then we simulated the RDF effect of SDE to examine the variability. Simulation results show that increasing the length of the SDE or decreasing the doping concentration of the SDE helps to improve the device characteristics. In addition, for variability, increasing the SDE length or decreasing the SDE doping concentration reduces σVT, σION, and σIOFF, but increases σION/(ION) and σIOFF/(IOFF). However, if both the SDE length and the SDE doping concentration are decreased, the σION/(ION) and σIOFF/(IOFF) can be very close to the values of the device whose SDE length and SDE doping concentration have not been altered, and better device characteristics can be obtained.
| Identifer | oai:union.ndltd.org:TW/106NDHU5442007 |
| Date | January 2018 |
| Creators | En-Ching Chen, 陳恩靖 |
| Contributors | Keng-Ming Liu, 劉耿銘 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 80 |
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