The study of traps in gate oxide layer of the FinFETs by using Random Telegraph Noise / 以隨機電報雜訊研究鰭式場效電晶體閘極氧化層缺陷之特性

碩士 / 國立清華大學 / 電子工程研究所 / 106 / abstract hide

Identiferoai:union.ndltd.org:TW/106NTHU5428004
Date January 2017
CreatorsKuo, Ping-Han, 郭秉翰
ContributorsLien, Chen-Hsin, 連振炘
Source SetsNational Digital Library of Theses and Dissertations in Taiwan
Languagezh-TW
Detected LanguageEnglish
Type學位論文 ; thesis
Format68

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