P-channel Differential Multiple-Time Programmable Memory Cells by Laterally Coupled Floating Metal Gate FinFETs / 側向耦合浮動金屬閘極鰭式場效電晶體之P型差動式可多次寫入記憶體元件

碩士 / 國立清華大學 / 電子工程研究所 / 106 / abstract hide

Identiferoai:union.ndltd.org:TW/106NTHU5428030
Date January 2018
CreatorsWang, Tai-Min, 王泰閔
ContributorsLin, Chrong-Jung, 林崇榮
Source SetsNational Digital Library of Theses and Dissertations in Taiwan
Languagezh-TW
Detected LanguageEnglish
Type學位論文 ; thesis
Format70

Page generated in 0.0147 seconds