碩士 / 國立臺灣大學 / 電子工程學研究所 / 106 / Starting with Moore''s law, we quickly review the development of semiconductors in the past 50 years, and understand the problems encountered by predecessors at each technology node along with the methods to overcome them. Also, we briefly describe the semiconductor materials and technologies that may be applied in the future, including III-V transistors and negative capacitance transistors.
The first part of this thesis introduces the characteristics of high-electron-mobility transistors (HEMTs) and its interface. We fabricated metal-oxide-semiconductor capacitor structure to extract interface traps density between III-V compound semiconductors and oxide layer. It was verified that the ammonium sulfide solution can reduce the interface traps density. We also compared different passivation conditions to obtain an optimized parameter. The optimized passivation condition was introduced into the process of the fin-structured InGaAs HEMTs, and the effect of surface passivation on the transistor was discussed.
In the second part, the fin structure metal-oxide-semiconductor HEMTs (Fin-MOSHEMTs) was successfully fabricated by process techniques. The atomic layer deposition technique was used to add 10 nanometer Al2O3 into the gate stack, which can effectively suppress the gate leakage. In addition, by scaling of fin width, we successfully fabricated normally-off HEMTs to meet the demand for low power consumption. Furthermore, we proposed a theory to explain the mechanism of threshold voltage modulation.
The third part of this thesis, we briefly introduce the ferroelectric materials and the application of negative capacitance characteristics. The high-k material HfO2 was combined with the ferroelectric material ZrO2 to form a negative capacitance device, which is used to verify the capacitance amplification characteristics. Also, we compared the capacitance amplification results between the different thickness combination of the oxide layer.
| Identifer | oai:union.ndltd.org:TW/106NTU05428093 |
| Date | January 2018 |
| Creators | Shun-Cheng Yang, 楊舜丞 |
| Contributors | Chao-Hsin Wu, 吳肇欣 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 99 |
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