碩士 / 國立臺北科技大學 / 電子工程系 / 106 / This paper study of the characteristics on conventional and junctionless FinTFTs. First of all, We investigated Junctionless FinTFTs DC and high frequency performances with different gate length and channel wire width structure. In the process of measurement of transfer, the main parameters are threshold voltage, ION/IOFF ratio, subthreshold swing and drain induced barrier lowering. High frequency measurements focused on the analysis of the cutoff frequency and the maximum oscillation frequency and discuss important small signal parameters. According to its result, this paper can provide a guideline for Junctionless FinTFTs design and fabrication in the future.
Investigation of breakdown, GIDL and on-state current in conventional FinTFTs with different extended wide drain region length through 3D simulation is presented. By extending the wide drain region length, we find out the best DC characteristics.In order to understand the reasons for improving electrical performances, we analyze and compare the energy band, electric field and band-to-band generation rate. During the process, the setting of conventional FinTFTs and fabrication process became optimal. In addition, Investigation of GIDL in Junctionless FinTFTs with different channel wire width is presented. The effect of different channel wire width on the gate-induced drain leakage current is discussed.
| Identifer | oai:union.ndltd.org:TW/106TIT05427091 |
| Date | January 2018 |
| Creators | Yan-wei Zeng, 曾彥瑋 |
| Contributors | Hsin-Hui Hu, 胡心卉 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 65 |
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