碩士 / 明新科技大學 / 電子工程系碩士班 / 107 / Planar field effect transistors have been in the semiconductor industry for a long time and are also very important components. However, in the era of nanometer process, the component size is constantly shrinking, and there are some problems and challenges. The continuous innovation of the products requires high efficiency, low cost and small size, which makes people more convenient to carry. In order to meet these needs, a three-dimensional fin field effect transistor (FinFET) has been found here to be a good component in nanoscale applications. In this experiment, a FinFET device is used. Compared with the conventional planar field effect transistor, the gate has a good controllability to the channel, and the FinFET component is maximized. efficacy.
In the measurement experiment, the n-type FinFET is used as the main component to be tested, with a fixed channel width W=0.12μm, matched with different channel lengths (L=10μm, 2μm, 0.5μm, 0.24μm, 0.16μm). Measure. An abnormality in the characteristic curves was observed using the technique of overexposure, and W/L=0.12μm/0.5μm,W/L=0.12μm/0.24μm, W/L=0.12μm/0.16μm, causing so-called floating The floating body effect or a kink effect. Then adding the temperature measurement (25°C,50°C,75°C,100°C), and then looking at the changes in the electrical characteristic curves, and found that the higher the temperature, the kink effect will become more and more obvious.
| Identifer | oai:union.ndltd.org:TW/107MHIT0686006 |
| Date | January 2019 |
| Creators | XIE,ZI-JUN, 謝子鈞 |
| Contributors | WANG,MU-CHUN, 王木俊 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 60 |
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