碩士 / 國立中央大學 / 通訊工程學系在職專班 / 107 / In this study is based on the comparison of FinFET high electron mobility transistors on AlGaN/GaN fabricated on SiC substrates. The FinFET transistor gate not only has good control capability, but also shrinks with Fin size. The characteristics of the device current density can be greatly improved, the gate leakage is reduced, and the threshold voltage is moved to the positive direction. At present, many papers have pointed out that the FinFET transistor can move the threshold voltage of the transistor to the positive direction.
In the Schottky gate FinFET transistor device, the gate length and the Fin width are both 2 μm, and the current density and characteristic resistance on the SiC substrate are 1395 mA/mm and 2.4 Ω-mm. The gate length of the metal oxide semiconductor gate FinFET transistor is 2 μm as well as the Fin width. The current density and characteristic resistance are significantly improved to 1986 mA/mm、2 Ω-mm compared with the Schottky gate FinFET transistor. In addition, for the measurement of temperature change, the current density at room temperature and 100 ° C high temperature is only reduced by about 23%, compared with the 25% reduction of Schottky gate FinFET transistor, so the Schottky gate is not much difference between the operation of the pole and the metal oxide semiconductor gate element from room temperature to high temperature.
In addition to the improvement in the forward bias characteristics, the FinFET structure does not affect its characteristics in the reverse bias characteristic although some of the gate regions are etched away. The Schottky gate structure and the metal oxide semiconductor gate structure also reduce the gate leakage current from 2.76 mA/mm to 4.52 x 10-6 mA/mm, and the breakdown voltage is increased from 605 V to 740 V.
Therefore, in this experiment, it can be concluded that the metal oxide semiconductor gate FinFET transistor is fabricated on the AlGaN/GaN grown on the SiC substrate, whether it is the forward bias characteristic of the component or the reverse bias state. The Schottky gate FinFET transistor is excellent in the growth of AlGaN/GaN on a SiC substrate, and operation in a high temperature environment is also feasible for components
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| Identifer | oai:union.ndltd.org:TW/107NCU05650049 |
| Date | January 2019 |
| Creators | Shih-Wun Chen, 陳詩文 |
| Contributors | Yin-Yi Lin, Yue-Ming Hsin, 林銀議, 辛裕明 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 54 |
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