碩士 / 國立高雄師範大學 / 電子工程學系 / 107 / In this work, P-type Tri-Gate FinFETs were investigated by using hot carrier effect (HCE) with different work functions, channel length and fin numbers. Under thermal equilibrium, the larger band bending could be found with the increasing of metal work function thus cause the increasing of saturation current and reduction of threshold voltage. For the high work function device, the increasing of metal ions in the gate electrode would enhance the probability of interface traps generation under hot carrier injection. As a result, the degradation of reliability is more significant. On the other hand, the increased saturation current and the reduced threshold voltage could be observed with the reduction of channel length. By the way, the worse reliability for the short channel device is suggested due to the enhanced lateral electric field thus cause more interface traps generated after hot carrier stress. With the increasing of fin numbers, the more severe compressive stress caused by Contact Etch Stop Layer (CESL) would enhance hole mobility. For the short channel device, the multi-fin device shows poor reliability. On the other hand, for the long-channel devices, the multi-fin devices show better reliability than the single-fin sample. It is suggested that the effect of compressive stress is more obvious for the short channel device.
| Identifer | oai:union.ndltd.org:TW/107NKNU0428005 |
| Date | January 2019 |
| Creators | LAI, CHIH-JUI, 賴致睿 |
| Contributors | YANG, YI-LIN, YEH, WEN-KUAN, 楊宜霖, 葉文冠 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 110 |
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