碩士 / 國立中山大學 / 材料與光電科學學系研究所 / 107 / Several promising technologies such as high-speed computing, big data and IoT depend on the innovation of memory devices. The non-volatile memory can access information without power supply. However, its access speed is slow that it’s necessary to develop the next-generation memory. The merits of next generation of memory are energy saving, fast access speed and large capacity. Among them, Resistive Random Access Memory (RRAM) is regarded as the most potential next generation memory.
The resistance switching of RRAM could be divided into high resistance state (HRS) and low resistance state (LRS). In addition, RRAM has the issue of "sneak current" owing to resistance variation, which causes the misjudgment. To improve the performance, one RRAM integrated with one transistor (1T1R) is widely used.
Moreover, the distribution of high and low resistance during the RRAM operation is an urgent issue. This research will investigate the effect of transistor on HRS in 1T1R device. And it plans to increase the gate voltage which applied to the transistor and thereby reduce the effect on the resistance distribution during RRAM reset process.
Measuring the Low-Temperature Poly-Si (LTPS) Fin-Field-Effect-Transistor (FinFETs¬) in which the RRAM is connected in series, it is found that abnormal leakage occurs when the transistor is operated in off-state. By changing temperature/ electric field experiments to investigate the correlation of this leakage current. Generally, the optimal Reset condition of RRAM is applying AC voltage with short rising time and long falling time. As a result, the performance and reliability of LTPS-FinFET under AC negative bias stress are studied to obtain the best Reset condition of AC voltage waveform of the 1T1R device.
| Identifer | oai:union.ndltd.org:TW/107NSYS5159021 |
| Date | January 2019 |
| Creators | Tzu-Yun Nieh, 聶慈筠 |
| Contributors | Bae-Heng Tseng, 曾百亨 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 111 |
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