N/F Incorporated High-k Gate Dielectric and SiGe Buried Channel on Electrical Characteristics of FinFET / 氮/氟置入高介電閘極介電層及矽鍺掩埋式通道對鰭式電晶體之電特性影響

碩士 / 國立清華大學 / 工程與系統科學系 / 107

Identiferoai:union.ndltd.org:TW/107NTHU5593004
Date January 2018
CreatorsTsai, Shang-Fu, 蔡尚甫
ContributorsChangLiao, Kuei-Shu, 張廖貴術
Source SetsNational Digital Library of Theses and Dissertations in Taiwan
Languagezh-TW
Detected LanguageEnglish
Type學位論文 ; thesis
Format84

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