碩士 / 國立臺灣師範大學 / 光電科技研究所 / 107 / In the semiconductor field, transistors are required to be extremely small; however, the functions are expected to be better and better. Therefore, experts in this field are always looking to find novel materials to apply in transistors to surmount the bottleneck. Ferroelectric materials get the researcher’s attention in recent years, because these materials have steady bipolar state in hysteresis loop, they can be used in memory function wildly. In addition, ferroelectric materials occur negative capacitance which has voltage amplification to challenge the subthreshold swing (SS) with physical limit, and is helpful to decrease the operation voltage VDD.
In this research, it is going to be about the use of ferroelectric materials, HfZrO2 (HZO), to be the insulator layer. The characteristic of hysteresis loop is discussed by changing different top electrode metal in MFM (Metal-Ferroelectric-Metal) structure. And memory circuit is under the concept of simple design, using HZO ferroelectric transistor to make 1T memory. The last, transistors carry up ferroelectric film to break through the physical limit of subthreshold swing with FinFET fabrication skill to achieve miniature size and increase performance.
| Identifer | oai:union.ndltd.org:TW/107NTNU5614003 |
| Date | January 2019 |
| Creators | Liao, Chun-Yu, 廖俊宇 |
| Contributors | Lee, Ming-Hung, 李敏鴻 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 65 |
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