碩士 / 國立臺灣海洋大學 / 光電科學研究所 / 107 / This thesis study the effects of phycoerythrin on the performance of the indium gallium zinc oxide (IGZO) thin film semiconductor photodetector . The electrons or holes generated due to the absorption of incident light by phycoerythrin are transferred to the underlying gallium indium gallium zinc oxide to increase the photocurrent of the IGZO based photodetectors. It was found that the the phycoerythrin/indium gallium zinc oxide structure has larger photocurrent intensity and photoresponse. The phycoerythrin/IGZO structure was irradiated with a 325 nm, 405 nm, 532 nm laser at a bias voltage of 6 V. Compared to the structure without phycoerythrin, under irradiation with 325 nm and 405 nm lasers, the light response was increased from 0.023 A / W, 0.039 A/W to 0.390 A/ W, 0.710 A/W, respectively, by about 17 and 18 times. Under the 532 nm laser irradiation, the phycoerythrin/indium gallium zinc oxide structure showed additional optical responsivity of 8.36×10-6 A/W to 0.0017 A/W for the visible light. In the original indium gallium zinc oxide structure, it can only absorb the ultraviolet light band, but after capping the phycoerythrin, the absorption range of the photodetector can be expanded to the visible light band, and the DI water can be used to remove the phycoerythrin showing its switching ability in detection optical wavelengths. This study also showed that the performance and responsivity of IGZO thin film semiconductor photodetectors can be enhanced by capping phycoerythrin.
| Identifer | oai:union.ndltd.org:TW/107NTOU5614015 |
| Date | January 2019 |
| Creators | Chan, Yi-Chieh, 詹逸傑 |
| Contributors | Lin,Tai-Yuan, 林泰源 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 47 |
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