碩士 / 國立高雄大學 / 電機工程學系碩博士班 / 107 / Hence, It also increases the saturation current and decreases the threshold voltage. Under the hot carrier injection, because the metal work functions increase, the more influence of metal ions on the interface layer, the greater the probability of interface defects. Therefore, the reliability degradation is more significant.
It is also discussed the impact of single and multi-fin structure in FinFET. Channel coupling effect leads to decline of the saturation current, but the fin bending (Contact Etch Stop Layer, CESL) causes the saturation current to rise. Therefore, there is a complicated phenomenon on the saturation current. However, under the hot carrier injection, the multi-fin had more reliability degradation than the single fin.
| Identifer | oai:union.ndltd.org:TW/107NUK00442011 |
| Date | January 2019 |
| Creators | LIN, WEI-DE, 林煒得 |
| Contributors | YEH, WEN-KUAN, 葉文冠 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 61 |
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