碩士 / 國立高雄大學 / 電機工程學系碩博士班 / 107 / In this work, Tri-Gate FinFETs with 16nm channel length, 10nm fin width and various Work Functions are investigated, some different phenomena may occur for Active Surface Area of different device’s structure. From the fresh devices, It could found that it had larger Drain Saturation Current and less Threshold Voltage at the device with higher work function. Under the NBTI effect, it could found under different metal work functions, the greater influence of the gate layer on the interface layer, the greater the probability that defects will occur, so the reliability degradation is more severe. In multi-fin devices, it could found that it’s degradation of Threshold voltage and Subthreshold Swing are more severe than single-fin devices.
| Identifer | oai:union.ndltd.org:TW/107NUK00442014 |
| Date | January 2019 |
| Creators | 林孟琰 |
| Contributors | Wen-Kuan Yeh, 葉文冠 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 74 |
Page generated in 0.0018 seconds