碩士 / 國立臺北科技大學 / 電子工程系 / 107 / This thesis will be divided into three major themes, to discuss P-type FinTFT for different processes separately, and analyze the DC characteristics, high-frequency characteristics, breakdown voltage or leakage characteristics of each devices application coverage. First, we discuss the DC and high-frequency characteristics of RF FinTFT for different drain extend structure design to optimize the structural design. The second part, we discuss the gate-induced drain leakage characteristics of HV FinTFT, the process are as same as the first part, only layout and doping range are different, and through the variable-temperature measurement to analyze its leakage mechanism. Finally, an RF junctionless FinTFTs will be fabricated and an S/D asymmetric doping method will be used to improve the breakdown voltage, also discuss the performance of this design on DC characteristics, high-frequency characteristics and low-frequency noise.
In the process of measurement of transfer, the main parameters are threshold voltage, subthreshold swing, DIBL, and breakdown voltage. High-frequency measurements focused on the analysis of cutoff frequency and maximum oscillation frequency and small-signal parameters to discuss important parameters. According to its result, this paper can provide a guideline for future device design and fabrication for applied to system on panel (SoP).
| Identifer | oai:union.ndltd.org:TW/107TIT00427093 |
| Date | January 2019 |
| Creators | HUANG,CHUN-LIN, 黃俊霖 |
| Contributors | HU,HSIN-HUI, 胡心卉 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 100 |
Page generated in 0.1288 seconds