碩士 / 國立臺北科技大學 / 電子工程系 / 107 / In this thesis, the large-signal analysis of RF power FinFETs with different structures using X-Parameters is presented.
First, we introduce the X-parameter principle and two de-embedding methods. To remove the parasitic effect of metal pads, the X-parameter of open dummy is measured and subtracted from the device under test (DUT). Then we observe the difference between X-parameters with de-embedding and without de-embedding.
Then a large-signal model based on these de-embedded X-parameters are simulated using the Advanced Design System (ADS) simulator to obtain the output power, power gain, and power-added efficiency (PAE) of FinFETs. Three devices with different drain-extension layouts are compared in this study. We also transform X-parameters to Z-parameters to obtain the output impedances. By analyzing the power characteristics, X-parameters and Z-parameters, we observe the advantages and disadvantages of these three devices. With these experimental results, a RF power FinFET design guideline is achieved to optimize the device performance.
| Identifer | oai:union.ndltd.org:TW/107TIT00427102 |
| Date | January 2019 |
| Creators | YANG, ZHI-XIN, 楊致信 |
| Contributors | HU, HSIN-HUI, CHEN, KUN-MING, 胡心卉, 陳坤明 |
| Source Sets | National Digital Library of Theses and Dissertations in Taiwan |
| Language | zh-TW |
| Detected Language | English |
| Type | 學位論文 ; thesis |
| Format | 39 |
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