The output from a ruby laser was homogenized, and used to laser anneal the active layer of GaA1As double heterostructure wafers in an attempt to improve the radiative efficiency of the active layer. At anneal energies exceeding the estimated threshold for melting of the active layer, the radiative efficiency was reduced by a factor of two. Subsequently, semiconductor laser diodes fabricated from laser annealed heterostructures performed much worse than those fabricated from unannealed heterostructures. / Science, Faculty of / Physics and Astronomy, Department of / Graduate
| Identifer | oai:union.ndltd.org:UBC/oai:circle.library.ubc.ca:2429/22398 |
| Date | January 1981 |
| Creators | Brett, Michael Julian |
| Source Sets | University of British Columbia |
| Language | English |
| Detected Language | English |
| Type | Text, Thesis/Dissertation |
| Rights | For non-commercial purposes only, such as research, private study and education. Additional conditions apply, see Terms of Use https://open.library.ubc.ca/terms_of_use. |
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