The varactor properties of silicon—diode rectifiers in the low-frequency region are investigated.
A theoretical analysis of a two-diode bridge is made, and the results experimentally verified using a matched pair of these diodes and a pump frequency of 455 Kc.
The theoretical transducer power gain is found to be a function of ( formula omitted). For the amplifier built, a transducer power gain of 12.6 db has been achieved with a bandwidth from 0 to 8 Kc.
With the diodes placed in a thermostatically controlled oven, the d-c drift is ±30 µvper hour.
The noise figure of the parametric amplifier bridge is about 3 db. A study of possible sources of noise is made. / Applied Science, Faculty of / Electrical and Computer Engineering, Department of / Graduate
| Identifer | oai:union.ndltd.org:UBC/oai:circle.library.ubc.ca:2429/38936 |
| Date | January 1962 |
| Creators | Sang, Marie Emmanuel Fok Ning Yow |
| Publisher | University of British Columbia |
| Source Sets | University of British Columbia |
| Language | English |
| Detected Language | English |
| Type | Text, Thesis/Dissertation |
| Rights | For non-commercial purposes only, such as research, private study and education. Additional conditions apply, see Terms of Use https://open.library.ubc.ca/terms_of_use. |
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