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Characterization of single -electron tunneling transistor

Normal-Superconductor-Superconductor (NSS) single-electron tunneling (SET) transistors were studied. A hysteresis in the current versus gate voltage curve was found in a SET transistor and SET trap hybrid system. This hybrid system can be used as a new type of memory cell in electronics. The inferred junction capacitance, as extracted from the nonlinear current-voltage characteristics, was measured as a function of magnetic field and temperature. Noise issue in SET transistor was studied as well.

Identiferoai:union.ndltd.org:UMASS/oai:scholarworks.umass.edu:dissertations-3360
Date01 January 2000
CreatorsJiang, Chong
PublisherScholarWorks@UMass Amherst
Source SetsUniversity of Massachusetts, Amherst
LanguageEnglish
Detected LanguageEnglish
Typetext
SourceDoctoral Dissertations Available from Proquest

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