In many digital designs there is a need to use multi-stage tapered buffers to drive large capacitive loads. These buffers contribute a significant percentage of overall power. In this thesis, we propose two novel tunable buffer designs that enable reduction in power in the presence of process variation. A strategy to derive the optimal buffer size and the optimal tuning rule in post-silicon phase is developed. By comparing several tunable buffer circuit topologies, we also demonstrate the tradeoffs in tunable buffer topology selection as a function of switching activity, timing requirements, and the magnitude of process variations. Using HSPICE simulations based on the high performance 32nm ASU Predictive Model, we show that up to 30% average power reduction can be achieved for a SRAM word-line decoder while maintaining the same timing yield. / text
| Identifer | oai:union.ndltd.org:UTEXAS/oai:repositories.lib.utexas.edu:2152/ETD-UT-2010-05-1167 |
| Date | 26 October 2010 |
| Creators | Lok, Mario Chichun |
| Source Sets | University of Texas |
| Language | English |
| Detected Language | English |
| Type | thesis |
| Format | application/pdf |
Page generated in 0.0022 seconds