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Molecular beam epitaxy of topological insulator Bi₂Se₃

In this thesis, I show my effort in growing atomically flat Bi₂Se₃ thin films using molecular beam epitaxy (MBE) method. Bi₂Se₃ is a kind of topological insulator, whose exotic surface states have been found in the samples that I grew. / text

Identiferoai:union.ndltd.org:UTEXAS/oai:repositories.lib.utexas.edu:2152/ETD-UT-2012-05-5573
Date02 August 2012
CreatorsChen, Yuxuan, 1986-
Source SetsUniversity of Texas
LanguageEnglish
Detected LanguageEnglish
Typethesis
Formatapplication/pdf

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