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The theory and application of bipolar transistors as displacement damage sensors

An important aspect of engineering systems for use in extreme environments is understanding the performance of electronic components in radiation environments (e.g., space environments, nuclear reactors, particle accelerators). To accomplish this, experimental and computational modeling approaches are used to understand physical mechanisms that lead to system level failures. When experimentally investigating displacement damage, a common radiation effect, the most important parameter to measure is the particle fluence. An approach that offers benefits over traditional measurement techniques uses the degradation of current gain in silicon bipolar junction transistors as a direct metric for displacement damage in silicon. This thesis covers the bipolar device physics and particle/crystal interactions necessary to understand how displacement damage leads to gain degradation and describes how bipolar devices can be applied as displacement damage sensors to measure particle fluence. The use of bipolar junction transistors as displacement damage sensors in neutron irradiations is demonstrated at lower fluences than previously achieved and first-of-a-kind displacement damage sensor measurements for proton irradiations are provided. The non-ionizing energy loss (NIEL) of each particle is shown to adequately correlate the two particle types, neutrons and protons, across five orders of magnitude of particle fluence using three bipolar junction transistors (2N1486, 2N2484, 2N2222).

Identiferoai:union.ndltd.org:VANDERBILT/oai:VANDERBILTETD:etd-03272017-130923
Date27 March 2017
CreatorsTonigan, Andrew Michael
ContributorsD. Greg Walker, Ronald D. Schrimpf
PublisherVANDERBILT
Source SetsVanderbilt University Theses
LanguageEnglish
Detected LanguageEnglish
Typetext
Formatapplication/pdf
Sourcehttp://etd.library.vanderbilt.edu/available/etd-03272017-130923/
Rightsunrestricted, I hereby certify that, if appropriate, I have obtained and attached hereto a written permission statement from the owner(s) of each third party copyrighted matter to be included in my thesis, dissertation, or project report, allowing distribution as specified below. I certify that the version I submitted is the same as that approved by my advisory committee. I hereby grant to Vanderbilt University or its agents the non-exclusive license to archive and make accessible, under the conditions specified below, my thesis, dissertation, or project report in whole or in part in all forms of media, now or hereafter known. I retain all other ownership rights to the copyright of the thesis, dissertation or project report. I also retain the right to use in future works (such as articles or books) all or part of this thesis, dissertation, or project report.

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