Portable communication systems require, in part, high-efficiency radio frequency power amplifiers (RF PA) if battery lifetime is to be conserved. Conventional amplifier classifications and definitions are presented in a unified and concise format. The Bipolar Junction Transistor (BJT) and Metal-Semiconductor Field Effect Transistor (MESFET) are evaluated as active devices in high-efficiency RF PA designs. Two amplifier classes (class CE and class F) meet the system requirements of an 850 MHz operating frequency, a power output of 3 W, a battery supply voltage of 9 Vdc, and a sinusoidal-type signal to be amplified. Both classes are evaluated through recent research literature and simulated using the PSpice® computer simulation program. Class CE and class F are found to provide efficiencies exceeding 80 percent under the given system constraints.</p. / Master of Science
| Identifer | oai:union.ndltd.org:VTETD/oai:vtechworks.lib.vt.edu:10919/41493 |
| Date | 12 March 2009 |
| Creators | Kunselman, Gary L. |
| Contributors | Electrical Engineering, Moore, Daniel J., Davis, William A., Elshabini-Riad, Aicha A. |
| Publisher | Virginia Tech |
| Source Sets | Virginia Tech Theses and Dissertation |
| Language | English |
| Detected Language | English |
| Type | Thesis, Text |
| Format | viii, 94 leaves, BTD, application/pdf, application/pdf |
| Rights | In Copyright, http://rightsstatements.org/vocab/InC/1.0/ |
| Relation | OCLC# 27871888, LD5655.V855_1992.K867.pdf |
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