The effects of ionizing radiation on the breakdown voltage of p-channel power MOSFETs were examined through two-dimensional simulation. The response of a reverse-biased n+-p junction to positive oxide-trapped charge, Not, is examined in detail, and analytical expressions for its characteristics are derived. These results provide insight into the breakdown performance of p-channel power MOSFETs in ionizing radiation environments, whose performance was found to be very different from corresponding n-channel power MOSFETs. Insights gained through analysis of p-channel devices suggest a termination/isolation scheme, the VLD-FRR, that will enhance p-channel device reliability in radiation environments. Two introductory chapters, which also serve as literature reviews, are provided. The buildup of Not in thick oxides and breakdown voltage of the power DMOS transistor are both reviewed, with attention focused on p-channel devices in both cases. Finally, suggestions for future work are given.
| Identifer | oai:union.ndltd.org:arizona.edu/oai:arizona.openrepository.com:10150/277798 |
| Date | January 1990 |
| Creators | Kosier, Steven Louie, 1966- |
| Contributors | Schrimpf, R. D., Cellier, F. E. |
| Publisher | The University of Arizona. |
| Source Sets | University of Arizona |
| Language | en_US |
| Detected Language | English |
| Type | text, Thesis-Reproduction (electronic) |
| Rights | Copyright © is held by the author. Digital access to this material is made possible by the University Libraries, University of Arizona. Further transmission, reproduction or presentation (such as public display or performance) of protected items is prohibited except with permission of the author. |
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