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A study of strained SiGe layers using metal oxide semiconductor capacitors and heterostructure bipolar transistors

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1. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.318307

Identifer	oai:union.ndltd.org:bl.uk/oai:ethos.bl.uk:318307
Date	January 1994
Creators	Goh, Inn Swee
Publisher	University of Liverpool
Source Sets	Ethos UK
Detected Language	English
Type	Electronic Thesis or Dissertation