Return to search

The characteristics of field effect transistors with Schottky barrier source and drain electrodes

No description available.

1. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.329351

Identifer	oai:union.ndltd.org:bl.uk/oai:ethos.bl.uk:329351
Date	January 1986
Creators	Maguire, Paul
Publisher	Queen's University Belfast
Source Sets	Ethos UK
Detected Language	English
Type	Electronic Thesis or Dissertation