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Fabrication and characterisation of the Heterojunction field effect transistor (HFET) and the bipolar inversion channel field effect transistor (BIFCET)

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1. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.379863

Identifer	oai:union.ndltd.org:bl.uk/oai:ethos.bl.uk:379863
Date	January 1987
Creators	Lebby, M. S.
Publisher	University of Bradford
Source Sets	Ethos UK
Detected Language	English
Type	Electronic Thesis or Dissertation