Mechanisms of thyristor turn-on wore studied. An attempt was made to relate the ‘on’ plasma spreading velocity to the small signal current gain value of the n-p-n transistor section of the thyristor. The extent to which the thyristor turns on initially largely affects the speed of turning-on the device. A model is proposed to calculate the initial turned-on area of thyristors.
| Identifer | oai:union.ndltd.org:bl.uk/oai:ethos.bl.uk:455674 |
| Date | January 1975 |
| Creators | Fong Yan, W. |
| Contributors | Hogarth, C. A. ; Fulop, W. |
| Publisher | Brunel University |
| Source Sets | Ethos UK |
| Detected Language | English |
| Type | Electronic Thesis or Dissertation |
| Source | http://bura.brunel.ac.uk/handle/2438/5347 |
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