The novelty of this research lies in the development of a dry, ultra-thin gate dielectric based on an inorganic/organic bi-layer with a total thickness of up to ~ 20 nm. The inorganic layer is aluminium oxide formed by UV/ozone exposure of aluminium layers. The organic layer is 1-octylphosphonic acid prepared by vacuum evaporation. A fully-dry fabrication process has been developed and the low-voltage OTFT operation has been demonstrated. In addition, the preparation of the aluminium oxide has been optimized through its implementation into p-channel thin-film transistors based on thermally evaporated pentacene. Results demonstrate that the UV/ozone exposure time primarily affects the threshold voltage of the transistors and the bias-stress induced shift in the threshold voltage. Both parameters improve when longer UV/ozone exposure times are implemented. Except for the lower field-effect mobility, the resultant transistor parameters are comparable to similar transistor structures reported to date using mixed wet-and-dry processes.
| Identifer | oai:union.ndltd.org:bl.uk/oai:ethos.bl.uk:629035 |
| Date | January 2014 |
| Creators | Chinnam, Krishna Chytanya |
| Publisher | University of Strathclyde |
| Source Sets | Ethos UK |
| Detected Language | English |
| Type | Electronic Thesis or Dissertation |
| Source | http://oleg.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=24061 |
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