Magnetic field sensors were developed with use of a SFI Shamrock sputtering tool. GMR spin-valve type sensors were developed in CIP geometry requiring no additional processing once deposited, and TMR magnetic tunnel junctions were developed in CPP. This meant the additional development of a photolithographic process in order to produce working devices. The MTJs used MgO as a tunneling barrier in reference devices, and a novel oxynitride barrier in experimental devices deposited by reactive RF sputtering from an elemental target in a variable argon/oxygen/nitrogen atmosphere. Devices produced show potential for further development.
| Identifer | oai:union.ndltd.org:bl.uk/oai:ethos.bl.uk:675949 |
| Date | January 2014 |
| Creators | Atcheson, Gwénaël Yves Peter |
| Publisher | Queen's University Belfast |
| Source Sets | Ethos UK |
| Detected Language | English |
| Type | Electronic Thesis or Dissertation |
Page generated in 0.0016 seconds