Diffraction stress analysis is a commonly used technique to evaluate the properties and performance of different classes of materials from engineering materials, such as steels and alloys, to electronic materials like Silicon chips. Often to better understand the performance of these materials at operating conditions they are also commonly subjected to elevated temperatures and different loading conditions. The validity of any measurement under these conditions is only as good as the control of the conditions and the accuracy and precision of the instrument being used to measure the properties. What is the accuracy and precision of a typical diffraction system and what is the best way to evaluate these quantities? Is there a way to remove systematic and random errors in the data that are due to problems with the control system used? With the advent of device engineering employing internal stress as a method for increasing performance the measurement of stress from microelectronic structures has become of enhanced importance. X-ray diffraction provides an ideal method for measuring these small areas without the need for modifying the sample and possibly changing the strain state. Micro and nano diffraction experiments on Silicon-on-Insulator samples revealed changes to the material under investigation and raised significant concerns about the usefulness of these techniques. This damage process and the application of micro and nano diffraction is discussed.
| Identifer | oai:union.ndltd.org:columbia.edu/oai:academiccommons.columbia.edu:10.7916/D8J1094V |
| Date | January 2011 |
| Creators | Polvino, Sean M. |
| Source Sets | Columbia University |
| Language | English |
| Detected Language | English |
| Type | Theses |
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