by Lee Wai Lok. / x and 1-x are in title are subscript. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1996. / Includes bibliographical references (leaves [67]-[70]). / by Lee Wai Lok. / Abstract --- p.i / Chapter Chapter1 --- Introduction --- p.1-1 / Chapter 1.1 --- Epitaxial Growth --- p.1-2 / Chapter 1.1.1 --- Background of Epitaxy --- p.1-2 / Chapter 1.1.2 --- Operating Principle of OMVPE --- p.1-2 / Chapter 1.1.3 --- Problems in Heteroepitaxy --- p.1-3 / Chapter 1.2 --- Basic Requirements of a Semiconductor Laser --- p.1-3 / Chapter 1.3 --- Our work --- p.1-4 / Chapter Chapter2 --- OMVPE Growth --- p.2-1 / Chapter 2.1 --- Our OMVPE System Design --- p.2-1 / Chapter 2.1.1 --- Growth Environment --- p.2-2 / Chapter 2.1.2 --- Susceptor Temperature Control --- p.2-2 / Chapter 2.1.3 --- Reactor Pressure Control --- p.2-2 / Chapter 2.1.4 --- MO Vapor Handling Control --- p.2-2 / Chapter 2.1.4.1 --- MO Flow Control --- p.2-3 / Chapter 2.1.4.2 --- Flow Path Selection --- p.2-3 / Chapter 2.1.5 --- Cabinet with Air Extraction --- p.2-3 / Chapter 2.1.6 --- Chemical Scrubber --- p.2-4 / Chapter 2.2 --- System Calibration --- p.2-4 / Chapter 2.3 --- Materials Used --- p.2-5 / Chapter 2.3.1 --- Precursor Materials --- p.2-5 / Chapter 2.3.2 --- Hydrogen Gas --- p.2-5 / Chapter 2.3.3 --- Nitrogen Gas --- p.2-6 / Chapter 2.3.4 --- Substrate --- p.2-6 / Chapter 2.4 --- Fabrication Conditions --- p.2-6 / Chapter Chapter3 --- Characterization --- p.3-1 / Chapter 3.1 --- X-ray Diffraction --- p.3-1 / Chapter 3.2 --- EDX Spectroscopy --- p.3-2 / Chapter 3.3 --- Optical Reflectance --- p.3-4 / Chapter Chapter4 --- Data Analysis --- p.4-1 / Chapter 4.1 --- ZnSe/GaAs(100) --- p.4-1 / Chapter 4.1.1 --- Structural Analysis --- p.4-1 / Chapter 4.1.2 --- Stoichiometry --- p.4-2 / Chapter 4.1.3 --- Growth Rate --- p.4-3 / Chapter 4.1.4 --- Energies of Critical Points --- p.4-3 / Chapter 4.1.5 --- Reflectance --- p.4-4 / Chapter 4.2 --- ZnCdSe/InP(100) --- p.4-5 / Chapter 4.2.1 --- Structural Analysis --- p.4-5 / Chapter 4.2.1.1 --- Structural Quality --- p.4-5 / Chapter 4.2.1.2 --- Crystal Structure --- p.4-5 / Chapter 4.2.1.3 --- Lattice Parameter --- p.4-8 / Chapter 4.2.2 --- Composition Range --- p.4-8 / Chapter 4.2.3 --- Degree of Relaxation --- p.4-9 / Chapter 4.2.4 --- Comparison to Prior Art --- p.4-10 / Chapter 4.2.5 --- Growth Rate --- p.4-11 / Chapter 4.2.6 --- Energies of Critical Points --- p.4-12 / Chapter Chapter5 --- Conclusions --- p.5-1 / Appendix A Calculation of the actual MO Mass Flow --- p.6-1 / Appendix B Interpretation of in-plane Lattice Parameter --- p.6-3 / Appendix C Structure Factor of Wurtzite Lattice --- p.6-4 / References --- p.7-1
| Identifer | oai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_321469 |
| Date | January 1996 |
| Contributors | Lee, Wai Lok., Chinese University of Hong Kong Graduate School. Division of Physics. |
| Publisher | Chinese University of Hong Kong |
| Source Sets | The Chinese University of Hong Kong |
| Language | English |
| Detected Language | English |
| Type | Text, bibliography |
| Format | print, ii, [70] leaves : ill. (some folded) ; 30 cm. |
| Rights | Use of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/) |
Page generated in 0.0022 seconds