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SiCl4 desorption in chlorine etching of Si(100): a first principle study.

Chan Siu-pang. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1999. / Includes bibliographical references (leaves 45-47). / Abstract also in Chinese. / TITLE PAGE --- p.i / THESIS COMMUTE --- p.ii / ABSTRACT (English) --- p.iii / ABSTRACT (Chinese) --- p.iv / ACKNOWLEDGMENT --- p.v / TABLE OF CONTENTS --- p.vi / LIST OF FIGURES --- p.vii / LIST OF TABLES --- p.viii / Chapter CHAPTER 1. --- Introduction --- p.1 / Chapter Section 1.1. --- General Introduction --- p.1 / Chapter Section 1.2. --- Background Information --- p.2 / Chapter 1.2.1. --- Si(100) Surface --- p.2 / Chapter 1.2.2. --- Structure of Cl/Si(100) --- p.7 / Chapter Section 1.3. --- Etching of Si(100) by Chlorine --- p.9 / Chapter Section 1.4. --- Theory --- p.14 / Chapter Section 1.5. --- Computational Model --- p.17 / Chapter CHAPTER 2. --- Desorption Mechanism of SiCl4 --- p.19 / Chapter Section 2.1. --- Desorption Mechanism --- p.19 / Chapter 2.1.1. --- Trajectory1 --- p.20 / Chapter 2.1.2. --- Trajectory2 --- p.23 / Chapter 2.1.3. --- Trajectory3 --- p.26 / Chapter 2.1.4. --- Trajectory4 --- p.29 / Chapter 2.1.5. --- Trajectory5 --- p.32 / Chapter 2.1.6. --- Trajectory6 --- p.35 / Chapter Section 2.2. --- Discussion --- p.38 / Chapter Section 2.3. --- Conclusion --- p.44 / REFERENCES: --- p.45

Identiferoai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_322603
Date January 1999
ContributorsChan, Siu-pang., Chinese University of Hong Kong Graduate School. Division of Chemistry.
Source SetsThe Chinese University of Hong Kong
LanguageEnglish, Chinese
Detected LanguageEnglish
TypeText, bibliography
Formatprint, viii, 47 leaves : ill. ; 30 cm.
RightsUse of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/)

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