Cheng, Kai Hong. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2004. / Includes bibliographical references (leaves 134-141). / Abstracts in English and Chinese. / Abstract --- p.i / Acknowledgement --- p.iv / Table of Contents --- p.v / List of Figures --- p.viii / List of Tables --- p.xix / Chapter iii. --- Table of Contents / Chapter Chapter 1 --- Introduction --- p.1 / Chapter 1.1 --- Semiconductor spintronics --- p.1 / Chapter 1.1.1 --- Overview --- p.1 / Chapter 1.2 --- Dilute magnetic semiconductors (DMS) --- p.2 / Chapter 1.2.1 --- Historical background --- p.3 / Chapter 1.2.2 --- Their importance and significance --- p.4 / Chapter 1.2.3 --- Material systems showing room temperature ferromagnetism --- p.5 / Chapter 1.3 --- Cobalt (iron)-doped titanium dioxide as DMS --- p.7 / Chapter 1.3.1 --- Structures and properties of titanium dioxide --- p.8 / Chapter 1.3.2 --- Various preparation techniques of cobalt (iron)-doped titanium dioxide --- p.10 / Chapter 1.3.3 --- This thesis --- p.13 / Chapter Chapter 2 --- Sample Preparation and Characterization Techniques --- p.14 / Chapter 2.1 --- Sample preparation --- p.14 / Chapter 2.1.1 --- RF magnetron sputtering --- p.14 / Chapter 2.1.2 --- MEVVA ion implantation --- p.17 / Chapter 2.1.3 --- Sample preparation conditions --- p.19 / Chapter 2.2 --- Characterization techniques --- p.24 / Chapter 2.2.1 --- Structural characterization --- p.24 / Chapter 2.2.1.1 --- Rutherford backscattering spectrometry (RBS) --- p.24 / Chapter 2.2.1.2 --- X-ray diffraction (XRD) --- p.26 / Chapter 2.2.1.3 --- X-ray photoelectron spectroscopy (XPS) --- p.28 / Chapter 2.2.1.4 --- Transmission electron microscopy (TEM) --- p.31 / Chapter 2.2.2 --- Vibrating sample magnetometry (VSM) --- p.33 / Chapter 2.2.3 --- Temperature varying resistivity measurements --- p.35 / Chapter Chapter 3 --- Characterization of Titanium Dioxide Samples --- p.40 / Chapter 3.1 --- RBS results --- p.40 / Chapter 3.2 --- XRD results --- p.43 / Chapter 3.3 --- XPS results --- p.47 / Chapter 3.4 --- Summary --- p.51 / Chapter Chapter 4 --- Characterization of Cobalt-implanted Titanium Dioxide Sample --- p.53 / Chapter 4.1 --- Cobalt dose dependence --- p.53 / Chapter 4.1.1 --- RBS results --- p.53 / Chapter 4.1.2 --- XRD results --- p.65 / Chapter 4.1.3 --- VSM results --- p.69 / Chapter 4.1.4 --- Temperature varying resistivity measurements --- p.75 / Chapter 4.2 --- Effects of annealing temperature --- p.77 / Chapter 4.2.1 --- RBS results --- p.77 / Chapter 4.2.2 --- XRD results --- p.79 / Chapter 4.2.3 --- XPS results --- p.83 / Chapter 4.2.4 --- TEM results --- p.88 / Chapter 4.2.5 --- VSM results --- p.91 / Chapter 4.2.6 --- Temperature varying resistivity measurements --- p.97 / Chapter 4.3 --- Summary --- p.99 / Chapter Chapter 5 --- Characterization of Iron-implanted Titanium Dioxide Samples --- p.101 / Chapter 5.1 --- Iron dose dependence --- p.101 / Chapter 5.1.1 --- RBS results --- p.101 / Chapter 5.1.2 --- XRD results --- p.107 / Chapter 5.1.3 --- VSM results --- p.110 / Chapter 5.1.4 --- Temperature varying resistivity measurements --- p.114 / Chapter 5.2 --- Effects of annealing temperature --- p.116 / Chapter 5.2.1 --- RBS results --- p.116 / Chapter 5.2.2 --- XRD results --- p.117 / Chapter 5.2.3 --- VSM results --- p.119 / Chapter 5.2.4 --- Temperature varying resistivity measurements --- p.121 / Chapter 5.3 --- Summary --- p.122 / Chapter Chapter 6 --- Conclusion and future work --- p.125 / Appendices --- p.127 / Bibliography --- p.134 / Publications --- p.141 / Chapter iv. --- List of Figures / Fig. 1.1 Crystal structures for two most stable polymorphs of TiO2: (a) anatase; and (b) rutile --- p.9 / Fig. 2.1 Schematic of RF sputtering system --- p.15 / Fig. 2.2 Motion of electrons emitted for the target surface (a) in the applied magnetic field (-z direction); (b) in the applied electric field (-y direction) and magnetic field (-z direction) --- p.16 / Fig. 2.3 Schematic of the implanter with the MEVVA ion source --- p.17 / Fig. 2.4 The TRIM ion distribution profile of Co atoms in anatase TiO2 by implantation to a Co dose of 2.2 x 1016 cm-2 at an extraction voltage of 65 kV --- p.21
| Identifer | oai:union.ndltd.org:cuhk.edu.hk/oai:cuhk-dr:cuhk_324903 |
| Date | January 2004 |
| Contributors | Cheng, Kai Hong., Chinese University of Hong Kong Graduate School. Division of Electronic Engineering. |
| Source Sets | The Chinese University of Hong Kong |
| Language | English, Chinese |
| Detected Language | English |
| Type | Text, bibliography |
| Format | print, xx, 141 leaves : ill. ; 30 cm. |
| Rights | Use of this resource is governed by the terms and conditions of the Creative Commons “Attribution-NonCommercial-NoDerivatives 4.0 International” License (http://creativecommons.org/licenses/by-nc-nd/4.0/) |
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