<p>The purpose of this thesis is to present a model for magnetic domains wholly situated inside an ion implanted channel. In this model, ion implantation is assumed to change the saturation magnetization, the wall energy density, and the in-plane susceptibility. As a result the channel and the domain induce magnetic pole distributions on the channel walls which interact with the bubble domain, altering its geometry and energy. An analysis for a circular domain with variable penetration and location in the channel, as well as a variational formulation for a generally deformable domain of fixed penetration in the implanted channel, are presented. The latter case has been programmed and the results obtained are discussed. The case of a domain penetrating into the unimplanted region outside the channel is also considered.</p> / Master of Engineering (ME)
| Identifer | oai:union.ndltd.org:mcmaster.ca/oai:macsphere.mcmaster.ca:11375/9480 |
| Date | 12 1900 |
| Creators | Mikhail, Hakim Sami |
| Contributors | Kinsner, W., Electrical Engineering |
| Source Sets | McMaster University |
| Detected Language | English |
| Type | thesis |
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