One of the biggest challenges for the semiconductor industry is the development of nanofabrication techniques that allow for the fabrication of structures on a scale tens of nanometers in size. This provides greater potential functionality at reduced costs. Established conventional techniques, such as photolithography, are unable to achieve features below 30 nm due to the inherent limitations of the wavelength of light sources currently available. For this reason block copolymers received considerable attention in order to overcome these challenges in lithographic technology. Block copolymers have an inherent processing advantage of self assembling into various nanoscopic structures such as spheres, cylinders and lamellae amongst others on a scale below 50 nm. The dimensions and structures are readily tuneable based on molecular weights (Mw) and compositions of the copolymers. However, to be usable within industry a great deal more research still needs to be conducted on the use and nature of block copolymers. In this study the block copolymer of poly(styrene-block-methylmethacrylate) (PS-b-PMMA) was investigated as a potential nano-mask for semiconductor growth. Research was conducted on thin films of PS-b-PMMA by altering the parameters influencing the kinetics and thermodynamic effects on the thin films, in order to produce a structure of cylinders of PMMA perpendicular to the substrate within a PS matrix on a silicon (Si) substrate. It is shown that thermally annealing the PS-b-PMMA thin films under conditions where there is no preferential interaction of the substrate or open surface with either components of the block copolymer (i.e. PS or PMMA with Si or ambient) and at an appropriate thin film thickness, perpendicular cylinders of PMMA within a PS matrix form in the thin films. The determined ideal thin film thickness is 32 nm, with non-preferential interaction attained between block and substrate by coating a poly(styrene-random-methylmethacrylate) (PS-r-PMMA) on the Si substrate and annealing within a vacuum. Additionally, acetic acid, as a known selective solvent of PMMA, is used to further process the thin film of PS-b-PMMA. Thus a final PS nano-mask containing pores with a diameter tens of nanometers in size is produced. The pores are shown to have an average diameter of 13.5 nm. Measurements were taken throughout the investigation using a scanning probe microscope (SPM) to determine surface topography and phase morphology of the PS-b-PMMA thin films. X-ray reflectometry (XRR) is used to measure film thickness. The research in this study shows that thin films of PS containing hexagonally arranged pores can be produced and could find potential use as a nano-mask for semiconductor growth.
| Identifer | oai:union.ndltd.org:netd.ac.za/oai:union.ndltd.org:nmmu/vital:10556 |
| Date | January 2014 |
| Creators | Dobson, Stephen Robert |
| Publisher | Nelson Mandela Metropolitan University, Faculty of Science |
| Source Sets | South African National ETD Portal |
| Language | English |
| Detected Language | English |
| Type | Thesis, Masters, MSc |
| Format | xiii, 85 leaves, pdf |
| Rights | Nelson Mandela Metropolitan University |
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