Thesis (MScEng (Electrical and Electronic Engineering))--University of Stellenbosch, 2010. / ENGLISH ABSTRACT: The main focus of this thesis is to document the formulation, extraction and validation of
nonlinear models for the on-wafer gallium nitride (GaN) high-electron mobility (HEMT) devices
manufactured at the Interuniversity Microelectronics Centre (IMEC) in Leuven, Belgium. GaN
semiconductor technology is fast emerging and it is expected that these devices will play an
important role in RF and microwave power amplifier applications. One of the main advantages
of the new GaN semiconductor technology is that it combines a very wide band-gap with high
electron mobility, which amounts to higher levels of gain at very high frequencies. HEMT
devices based on GaN, is a fairly new technology and not many nonlinear models have been
proposed in literature. This thesis details the design of hardware and software used in the
development of the nonlinear models. An intermodulation distortion (IMD) measurement setup
was developed to measure the second and higher-order derivative of the nonlinear drain current.
The derivatives are extracted directly from measurements and are required to improve the
nonlinear model IMD predictions. Nonlinear model extraction software was developed to
automate the modelling process, which was fundamental in the nonlinear model investigation.
The models are implemented in Agilent’s Advanced Design System (ADS) and it is shown that
the models are capable of accurately predicting the measured S-parameters, large-signal singletone
and two-tone behaviour of the GaN devices. / AFRIKAANSE OPSOMMING: Die hoofdoel van hierdie tesis is om die formulering, ontrekking en validasie van nie-lineêre
modelle vir onverpakte gallium nitraat (GaN) hoë-elektronmobilisering transistors (HEMTs) te
dokumenteer. Die transistors is vervaaardig by die Interuniversity Microelectronics Centre
(IMEC) in Leuven, België. GaN-halfgeleier tegnologie is besig om vinnig veld te wen en daar
word voorspel dat hierdie transistors ʼn belangrike rol gaan speel in RF en mikrogolf kragversterker
toepassings. Een van die hoof voordele van die nuwe GaN-halfgeleier tegnologie is
dat dit 'n baie wyd band-gaping het met hoë-elektronmobilisering, wat lei tot hoë aanwins by
mikrogolf frekwensies. GaN HEMTs is 'n redelik nuwe tegnologie en nie baie nie-lineêre
modelle is al voorgestel in literatuur nie. Hierdie tesis ondersoek die ontwerp van die hardeware
en sagteware soos gebruik in die ontwikkeling van nie-lineêre modelle. 'n Intermodulasie
distorsie-opstelling (IMD-opstelling) is ontwikkel vir die meting van die tweede en hoër orde
afgeleides van die nie-lineêre stroom. Die afgeleides is direk uit die metings onttrek en moet die
nie-lineêre IMD-voorspellings te verbeter. Nie-lineêre onttrekking sagteware is ontwikkel om die
modellerings proses te outomatiseer. Die modelle word geïmplementeer in Agilent se Advanced
Design System (ADS) en bewys dat die modelle in staat is om akkurate afgemete S-parameters,
grootsein enkeltoon en tweetoon gedrag van die GaN-transistors te kan voorspel.
| Identifer | oai:union.ndltd.org:netd.ac.za/oai:union.ndltd.org:sun/oai:scholar.sun.ac.za:10019.1/4306 |
| Date | 03 1900 |
| Creators | Brooks, Clive Raymond |
| Contributors | Van Niekerk, C., University of Stellenbosch. Faculty of Engineering. Dept. of Electrical and Electronic Engineering. |
| Publisher | Stellenbosch : University of Stellenbosch |
| Source Sets | South African National ETD Portal |
| Language | English |
| Detected Language | Unknown |
| Type | Thesis |
| Format | 122 p. : ill. |
| Rights | University of Stellenbosch |
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