M.Ing. (Electrical & Electronic Engineering) / The gate turn-off thyristor is discussed as a power switch. A gate-firing circuit for gate turn-off thyristors in the range 10 A - 300 A was developed. The resonant dc-link as snubber for voltage fed inverters is discussed. On considering various factors, the gate turn-off thyristor was chosen as switching component in the inverter. The problems that deve16ped with the use of gate turn-off thyristors in resonant dc-link inverters w,re discussed. Which lead to the development of a storage time compensator for gate turn-off thyristors. Attention was given to the various possible control methods for the resonant dc-link. A study of the possible control strategies results in the development and manufacturing of both a single-phase and a three-phase controller. The operation of the resonant inverter and inverter/load system were evaluated in terms of wave shapes in the time domain.
| Identifer | oai:union.ndltd.org:netd.ac.za/oai:union.ndltd.org:uj/uj:12422 |
| Date | 29 September 2014 |
| Creators | Deacon, Johan Abraham |
| Source Sets | South African National ETD Portal |
| Detected Language | English |
| Type | Thesis |
| Rights | University of Johannesburg |
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