Return to search

Návrh zdvojovače napětí v technologii ACMOS 0,25 m / Voltage doubler design in 0,25 m CMOS technology

This diploma thesis deals with the design of a partially integrated charge pump in 0.25 micron technology ACMOS. The work is divided into two main parts, theoretical and practical. The theoretical section describes in detail various topologies of higher voltage generation of a charge pump and selected methods of regulating the output voltage of charge pumps. The practical part deals with the the actual design of a charge pump together with the arguments for the choice of the TPVD topology and the type of the regulation. Three regulation methods of a charge pump were implemented, tested and are dealt with: Pulse Skip, Constant frequency and PWM. There are 3 sub chapters, each describing a different regulation method, defining all the key elements of the design of such a charge pump and the results of the simulations are discussed. Conclusion of the thesis summarizes the results of the design of charge pumps, comparing them on the basis of the chosen type of output voltage regulation.

Identiferoai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:221011
Date January 2014
CreatorsSynek, Ladislav
ContributorsProkop, Roman, Radhoštěm, Milan Valenta, ON Semiconductor, Rožnov pod
PublisherVysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií
Source SetsCzech ETDs
LanguageCzech
Detected LanguageEnglish
Typeinfo:eu-repo/semantics/masterThesis
Rightsinfo:eu-repo/semantics/restrictedAccess

Page generated in 0.0021 seconds