The Si(100) surface and Ga surface phases up to 1 ML on their oxidation have been studied by XPS and LEED. The selective growth of Ga on the SiO2/Si structures fabricated by EBL has been analyzed using SEM and AFM methods. It was proved that Ga clusters grow in structures beside the oxide. The structure of alumina on Ni3Al(111) and NiAl(110) substrates was fully determined by combining the results of STM measurements and DFT simulations. It was determined the alumina/NiAl(110) does not form a suitable template for ordered Fe and Co clusters growth. However, the next research confirmed the alumina/Ni3Al(111) forms template appropriate to clusters growth purpose.
| Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:228094 |
| Date | January 2008 |
| Creators | Němeček, Tomáš |
| Contributors | Rezek, Bohuslav, Čechal, Jan |
| Publisher | Vysoké učení technické v Brně. Fakulta strojního inženýrství |
| Source Sets | Czech ETDs |
| Language | Czech |
| Detected Language | English |
| Type | info:eu-repo/semantics/masterThesis |
| Rights | info:eu-repo/semantics/restrictedAccess |
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