Kvantitativní mapování dopantu v polovodiči pomocí kontrastu injektovanéhonáboje v rastrovacím mikroskopu s velmi pomalými elektrony / Quantitative mapping of dopant in semiconductor using injected chargecontrast in very-slow-electron scanning electron microscope

Description

This master's thesis deals with study of the injected charge contrast mechanism of doped semiconductors by using the ultra – high vacuum scanning low electron energy microscope (UHV SLEEM). The aims of this work were to explain the injected charge contrast mechanism, to ability of this contrast mechanism to map the dopant density quantitatively and to identify the influencing factors.

Links & Downloads

1. http://www.nusl.cz/ntk/nusl-228856

Tags

Additional Fields

Identifer	oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:228856
Date	January 2009
Creators	Mikmeková, Šárka
Contributors	Müllerová, Ilona, Pavloušková, Zina
Publisher	Vysoké učení technické v Brně. Fakulta strojního inženýrství
Source Sets	Czech ETDs
Language	Czech
Detected Language	English
Type	info:eu-repo/semantics/masterThesis
Rights	info:eu-repo/semantics/restrictedAccess