This diploma thesis deals with the growth of semiconductor nanowires on Ge(111) surface. The nanowires were prepared by means of PVD (physical vapor deposition). The growth was calatyzed by Au colloidal nanoparticles. An impact of different growth conditions on nanowire morfology is presented. It is demonstrated that Ge nanowires grow preferentially along axis. Ge wires with orientation were observed as well.
| Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:231358 |
| Date | January 2014 |
| Creators | Pejchal, Tomáš |
| Contributors | Grym, Jan, Kolíbal, Miroslav |
| Publisher | Vysoké učení technické v Brně. Fakulta strojního inženýrství |
| Source Sets | Czech ETDs |
| Language | Czech |
| Detected Language | English |
| Type | info:eu-repo/semantics/masterThesis |
| Rights | info:eu-repo/semantics/restrictedAccess |
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