This master’s thesis deals with the problematics of influence of ionizing radiation on semiconductor devices and their properties. The aim of the thesis is to analyze the different types of radiation that can occur in the areas of application of these components. In the second part, the degradation processes are explored, with emphasis on the influence caused by the radiation dose. Also, the displacement damage and SEE effects are described, but just slightly, because they are not part of this work. The third part describes the device design process and harmful effects, that have to be considered during the design phase. In the forth and the fifth parts of this work were done modeling of radiation effects (influence of dose rate, Single-Event Upset and Total Ionizing Dose) in PSpice program and was carried out the possibility of designing a simple dosimeter with silicon diode. In conclusion, the results of the thesis are summarized and evaluated.
| Identifer | oai:union.ndltd.org:nusl.cz/oai:invenio.nusl.cz:377051 |
| Date | January 2018 |
| Creators | Yermalayeva, Darya |
| Contributors | Šteffan, Pavel, Musil, Vladislav |
| Publisher | Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií |
| Source Sets | Czech ETDs |
| Language | Czech |
| Detected Language | English |
| Type | info:eu-repo/semantics/masterThesis |
| Rights | info:eu-repo/semantics/restrictedAccess |
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