<p dir="ltr">As silicon (Si) technology advances to 3 nm node and beyond, vertically stacking in 3D is considered as the primary choice to increase the density of transistors per unit area for better chip performance. Therefore, looking for new materials capable of replacing Si in back-end-of-line (BEOL) compatible monolithic 3D (M3D) integration has become one of the most important topics in the current field of electronic devices. Recent developed atomic layer deposition (ALD) deposited indium oxide (In<sub>2</sub>O<sub>3</sub>) field-effect transistors (FETs) have realized excellent electrical performance including field effect mobility over 100 cm<sup>2</sup>/V·s, on/off ratio up to 10<sup>17</sup> and on-state current (I<sub>ON</sub>) over 2.5 mA/μm in nanometer thin In<sub>2</sub>O<sub>3</sub> FETs, providing promising prospect for next generation electronics. In this thesis, four main In<sub>2</sub>O<sub>3</sub> related topics are discussed to examine the practicality of ALD In<sub>2</sub>O<sub>3</sub> as channel material in BEOL compatible applications. First, the bias stability of planar In<sub>2</sub>O<sub>3</sub> transistors and the effect of tin doping are studied. Second, gate-all-around (GAA) In<sub>2</sub>O<sub>3</sub> FETs are implemented to improve I<sub>ON</sub> up to record high 20 mA/μm, and its reliability is systematically measured and analyzed. Third, multilayer In<sub>2</sub>O<sub>3</sub> FETs are constructed to investigate the possibility of vertical stacking. Last, vertical full oxide transistors with In<sub>2</sub>O<sub>3</sub> gate are demonstrated to prove the feasibility of potential 3D integration.</p>
| Identifer | oai:union.ndltd.org:purdue.edu/oai:figshare.com:article/24718536 |
| Date | 04 December 2023 |
| Creators | Zhuocheng Zhang (17543502) |
| Source Sets | Purdue University |
| Detected Language | English |
| Type | Text, Thesis |
| Rights | CC BY 4.0 |
| Relation | https://figshare.com/articles/thesis/ATOMIC-LAYER-DEPOSITED_INDIUM_OXIDE_TRANSISTORS_FOR_BACK-END-OF-LINE_MONOLITHIC_3D_INTEGRATION/24718536 |
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