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Defect-Engineered Two-Dimensional Transition Metal Dichalcogenides for High-Efficient Piezoelectric Sensor / Defect-Engineered 2-Dimensional Transition Metal Dichalcogenides for High-Efficient Piezoelectric Sensor

Piezoelectricity in two-dimensional (2D) transition metal dichalcogenides (TMDs) has attracted significant attention due to their unique crystal structure and the lack of inversion centers when the bulk TMDs thin down to monolayer. Although the piezoelectricity effect in atomic-thickness TMDs has been demonstrated, they are not scalable. Herein, we demonstrate a piezoelectric effect from large-scale, sputtered MoS2 and WS2 using a robust defect-engineering based on the thermal-solvent annealing and solvent immersion process. This yields a higher piezoelectric output over 20 times after annealing or solvent immersion. Indeed, the piezoelectric responses are strengthened with the increases of defect density. Moreover, the MoS2 or WS2 piezoelectric device array shows an exceptional piezoelectric sensitivity with a high-level uniformity and excellent environmental stability under ambient conditions. A detailed study of the sulfur vacancy-dependent property and its resultant asymmetric structure-induced piezoelectricity is reported. The proposed approach is scalable and can produce advanced materials for flexible piezoelectric devices to be used in emerging bioinspired robotics and biomedical applications.

Identiferoai:union.ndltd.org:unt.edu/info:ark/67531/metadc1808451
Date05 1900
CreatorsKim, Junyoung
ContributorsChoi, Wonbong, 1963-, Aouadi, Samir, Mehta, Gayatri
PublisherUniversity of North Texas
Source SetsUniversity of North Texas
LanguageEnglish
Detected LanguageEnglish
TypeThesis or Dissertation
Formatix, 52 pages : illustrations (chiefly color), Text
RightsPublic, Kim, Junyoung, Copyright, Copyright is held by the author, unless otherwise noted. All rights Reserved.

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