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Technique for separation of carrier densities and mobilities in highly nondegenerate multiband semiconductors

The development of the conductivity coefficients is reviewed for both highly degenerate metals, having an energy dependent relaxation time, and semiconductors, obeying Boltzmann statistics and having a relaxation time varying as the energy to the λ power.

Identiferoai:union.ndltd.org:unt.edu/info:ark/67531/metadc332835
Date12 1900
CreatorsRater, Lonnie M.
PublisherNorth Texas State University
Source SetsUniversity of North Texas
LanguageEnglish
Detected LanguageEnglish
TypeThesis or Dissertation
FormatText
RightsPublic, Rater, Lonnie M., Copyright, Copyright is held by the author, unless otherwise noted. All rights reserved.

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