Silicon-on-insulator formed by high dose oxygen ion implantation and subsequent epitaxially grown silicon layers were studied and compared with silicon on sapphire materials. Czochralski grown, (100) silicon wafers were implanted with molecular oxygen ions, 0+2, to a total dose of 2.12 x 10^18 0+/cm^2 at an energy of 150 keV/atom.
| Identifer | oai:union.ndltd.org:unt.edu/info:ark/67531/metadc798239 |
| Date | 12 1900 |
| Creators | Hamdi, Aboud Helal |
| Publisher | North Texas State University |
| Source Sets | University of North Texas |
| Language | English |
| Detected Language | English |
| Type | Thesis or Dissertation |
| Format | Text |
| Rights | Public, Copyright, Copyright is held by the author, unless otherwise noted. All rights |
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