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<p> An investigation is reported on the oxidation properties of alpha-zirconium at 850°C and beta-zirconium at 950°C in oxygen for periods extending to 400 hr. and 100 hr. , respectively. Nitriding kinetics of zirconium in the range of 750° to 1000°C up to 200 hr. were investigated. The kinetics wen determined by volumetric and gravimetric techniques and may be represented by' a parabolic relationship after a period of more rapid oxidation. The uptakes of oxygen or nitrogen were consistent with the mathematical evaluations based on multi-phase diffusion models. Two diffusion models were advanced; one based upon differential and the other upon integral solutions of diffusion equations. It was possible to separate quantatively the oxygen or nitrogen partitions in the scale, alpha and beta phases of zirconium. </p> <p> The diffusivity of nitrogen in alpha-zirconium was determined by using transverse microhardness measurements. The diffusivity is: D = 0.15 exp (-54100/RT)cm/sec^2 for the temperature range of 750°- l000°C. </p> <p> The influence of oxygen-nitrogen atmospheres on the scaling rate of alpha-zirconium at 850°C was investigated. Small additions of either gas to the other increased the sealing rate. A definite breakaway point was observed in the scaling kinetics and the time interval to the transition point varied with the relative amounts of nitrogen to oxygen. </p> <p> Scaling rates of zirconium at 850° and 950°C in the oxygen-water vapor atmospheres initially obeyed to a good approximation a parabolic relationship which was followed by a much faster scaling rate. </p> / Thesis / Doctor of Philosophy (PhD)

The purpose of this thesis is to examine the radiation from high-temperature superconducting mesas of Bi2Sr2CaCu2O8+ (BSCCO). This is motivated by the need for coherent sources of continuous wave terahertz (THz) emission capable of radiating practically in the THz frequency band. As BSCCO has been shown to be tunable from 0.5–2.4 THz (i.e., through the entire socalled terahertz gap centered about 1 THz), and has a higher peak operating temperature near 1 THz than most alternative sources, it is a good candidate for imaging and spectroscopy device applications [1]. When a static DC voltage is applied to a BSCCO mesa, the stack of Josephson junctions intrinsic to this type-II layered superconductor synchronously radiate. Adjustment of the bath temperature and applied voltage allows for the high degree of tunability observed for such an emitter [2]. To determine the angular dependence of radiation from BSCCO mesas, the dual source model from antenna theory is employed, and Love’s equivalence principle is used to simplify this framework. The total emission power obtained in this manner for the pie-shaped wedge is then fit to experimental results for a thin isosceles triangular mesa using the method of least squares, resulting in a standard deviation of = 0:4657. Additionally, symmetry is shown to play a significant role in the emissions for the transverse magnetic (TM) cavity modes of the equilateral triangular mesa. When the full group symmetry is imposed, the density of allowed modes is heavily diminished, and the original first excited even mode becomes the C3v symmetric ground state. These results for the equilateral triangle suggest, along with earlier experiments on the regular pentagonal mesa [3], that symmetry breaking effects can be used for purposes of tuning the characteristic frequency and angular dependence of the power radiated from BSCCO mesas with a high degree of symmetry.

Demand for capable and reliable semiconductor and fabrication technology for high temperature and power electronics applications has been increasing in recent years. Silicon Carbide (SiC), as a wide bandgap compound semiconductor, demonstrates superior characteristics such as high thermal conductivity, high breakdown voltage, and long-lasting reliable operation at elevated temperature. SiC-based circuits and systems are capable to offer significant performance enhancements to various applications. Integrated power management units and conversion modules in HEVs, integrated sensors for aircraft engines, development of small-sized portable power generators are among many applications that require reliable circuits with long-lasting functional lifetime. Nevertheless, there are numerous challenges associated with the design and fabrication of SiC-based circuits. The aim of this research is to practically design and implement novel operational amplifiers (opamps) based on Vertical Channel 4H-SiC JFET (SiC JFET) that can be utilized as sub-circuits of integrated SiC JFET-based circuits and systems. Recently, SiC power JFET-based power management units were developed that deploy non-SiC JFET-based circuits for analog signal processing, driving, and control, because all SiC JFET-based circuits were not available for full integration. However, utilizing SiC JFET for analog design (in order to close the mentioned gap) exhibits significant design challenges, even at room temperature. These fundamental challenges are low intrinsic gain, the requirement to limit the gate to source voltage range, and restrictions on utilizing channel length as a design parameter due to fabrication complexity. These challenges must be successfully overcome at room temperature, before moving towards high temperature SiC JFET-based analog design. The main objective of this dissertation is to establish a design base, overcome the challenges, demonstrate the feasibility, and present all SiC JFET-based opamps that are designed for gain, CMRR, and overall performance. Before attempting to design, both Enhancement and Depletion Mode SiC JFETs are characterized, analyzed, and modeled for simulation. Unique and reliable opamp configurations are presented that take design requirements into account, use threshold voltage instead of channel length as a design parameter, and employ gain enhancement techniques while obtaining maximum possible bandwidth. The final opamps are fabricated and tested and the results show that the objective is accomplished.

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Silicon carbide (SiC) is a wide bandgap material capable of higher voltage and higher temperature operation compared to its silicon (Si) counterparts due to its higher critical electric field (E-field) and higher thermal conductivity. Using SiC, MOSFETs with a theoretical high temperature operation and reliability is achievable. However, current bottlenecks in high temperature SiC MOSFETs lie within the limitations of standard packaging. Additionally, there are reliability issues relating to the gate oxide region of the MOSFET, which is exacerbated through high temperature conditions. In this thesis, high temperature effects on current-generation SiC MOSFETs are studied and analyzed. To achieve this, a high temperature package is created to achieve reliable operation of a SiC MOSFET at junction temperatures of 300 °C. The custom, high temperature package feasibility is verified through studying trends in SiC MOSFET behavior with increasing temperature up to 300 °C by static characterization. Additionally, the reliability of SiC MOSFETs at 300 °C is tested with accelerated lifetime bias tests. / M.S. / Electrical devices that are rated for high temperature applications demand a use of a material that is stable and reliable at the elevated temperatures. Silicon carbide (SiC) is such a material. Devices made from SiC are able to switch faster, have a superior efficiency, and are capable of operating at extreme temperatures much better than the currently widely used silicon (Si) devices. There are limitations on SiC certain structures of SiC devices, such as the metal oxide semiconductor field effect transistor (MOSFET), have inherent reliability issues related to the fabrication of the device. These reliability issues can get worse over higher temperature ranges. Therefore, studies must be made to determine the feasibility of SiC MOSFETs in high temperature applications. To do so, industry standard tests are conducted on newer generation SiC MOSFETs to ascertain their use for said conditions.

Feldspar minerals are framework aluminosilicates that comprise approximately 60 percent of the Earth's crust. The elastic and thermodynamic properties of this important mineral group are needed for the interpretation of seismic wave velocities, for understanding cation partioning patterns and for the determination of phase boundaries and reactions involving feldspars in the Earth's crust. Until recently, no systematic approach has been applied to describe the structural behavior of feldspars as a function of pressure, temperature and composition. In this thesis, high-pressure and high-temperature X-ray diffraction data were collected for feldspars over a range of compositions which has led to the development a structural model that allows one to predict the structural evolution of feldspars at depth in the Earth's crust. Specifically, the equations of state have been determined for two plagioclase feldspars (An20 and An78) with different states of Al/Si ordering using single-crystal X-ray diffraction. This study has shown that the introduction of Al,Si disorder into plagioclase structures at constant composition softens the structure by 4(1)% for An0, 2.5(9)% for An20 and is essentially zero for An78 compositions. The effect of pressure on the structure of an ordered An20 was also determined up to 9.15 GPa using single-crystal X-ray diffraction and it was found that the dominant compression mechanism involves tilting of the AlO4 and SiO4 tetrahedra. Similarly, high-temperature single-crystal X-ray diffraction data collected from an ordered An26 plagioclase and powder X-ray diffraction collected on a suite of Na-rich plagioclases that were refined using the Rietveld method indicate that the major structural response to increased temperature involves tilting of the tetrahedra. Building on ideas originally proposed by Dr. Helen Megaw, the changes in the conformation of the tetrahedral framework of feldspars can be described in terms of four distinct tilt systems of rigid tetrahedra. This model demonstrates that the fundamental reason for the observed anisotropy and volume change of feldspars lies in the topology of the tetrahedral framework with the greatest contribution attributed to tilt systems 2 and 3. / Ph. D.