In this dissertation, a theory of modulation response of a semiconductor quantum dot (QD) laser is developed. The effect of the following factors on the modulation bandwidth of a QD laser is studied and the following results are obtained:<br /><br />1) Carrier capture delay from the optical confinement layer into QDs<br /><br />Closed-form analytical expressions are obtained for the modulation bandwidth omega_{-3 dB} of a QD laser in the limiting cases of fast and slow capture into QDs. omega_{-3 dB} is highest in the case of instantaneous capture into QDs, when the cross-section of carrier capture into a QD sigma_n = infinity. With reducing sigma_n, omega_{-3 dB} decreases and becomes zero at a certain non-vanishing sigma_n^{min}. This sigma_n^{min} presents the minimum tolerable capture cross-section for the lasing to occur at a given dc component j_0 of the injection current density. The higher is j_0, the smaller is sigma_n^{min} and hence the direct modulation of the output power is possible at a slower capture. The use of multiple layers with QDs is shown to considerably improve the modulation response of the laser -- the same omega_{-3 dB} is obtained in a multi-layer structure at a much lower j_0 than in a single-layer structure.<br /><br />2) Internal optical loss in the optical confinement layer<br /><br />The internal optical loss, which increases with free-carrier density in the waveguide region, considerably reduces the modulation bandwidth omega_{-3 dB} of a QD laser. With internal loss cross-section sigma_int increasing and approaching its maximum tolerable value, the modulation bandwidth decreases and becomes zero. There exists the optimum cavity length, at which omega_{-3 dB} is highest; the larger is sigma_int, the longer is the optimum cavity.<br /> <br />3) Excited states in QDs<br /><br />Direct and indirect (excited-state-mediated) mechanisms of capture of carriers from the waveguide region into the lasing ground state in QDs are considered, and the modulation response of a laser is calculated. It is shown that, when only indirect capture is involved, the excited-to-ground-state relaxation delay strongly limits the ground-state modulation bandwidth of the laser -- at the longest tolerable relaxation time, the bandwidth becomes zero. When direct capture is also involved, the effect of excited-to-ground-state relaxation is less significant and the modulation bandwidth is considerably higher.<br /> / Ph. D.

This work develops a comprehensive theoretical model for a semiconductor laser, which exploits tunneling-injection of electrons and holes into quantum dots (QDs) from two separate quantum wells (QWs). The potential of such a tunneling-injection QD laser for temperature-stable and high-power operation is studied under the realistic conditions of out-tunneling leakage of carriers from QDs (and hence parasitic recombination outside QDs) and the presence of the wetting layer (WL). The following topics are included in the dissertation: 1) Characteristic temperature of a tunneling-injection QD laser The threshold current density jth and the characteristic temperature T0 are mainly controlled by the recombination in the QWs. Even in the presence of out-tunneling from QDs and recombination outside QDs, the tunneling-injection laser shows the potential for significant improvement of temperature stability of jth — the characteristic temperature T0 remains very high (above 300 K at room temperature) and not significantly affected by the QD size fluctuations. 2) Output power of a tunneling-injection QD laser Closed-form expressions for the light-current characteristic (LCC) and carrier population across the layered structure are derived. Even in the presence of out-tunneling leakage from QDs, the intensity of parasitic recombination outside QDs is shown to remain restricted with increasing injection current. As a consequence, the LCC of a tunneling-injection QD laser exhibits a remarkable feature — it becomes increasingly linear, and the slope efficiency grows closer to unity at high injection currents. The linearity is due to the fact that the current paths connecting the opposite sides of the structure lie entirely within QDs — in view of the three-dimensional confinement in QDs, the out-tunneling fluxes of carriers from dots are limited. 3) Effect of the WL on the output power of a tunneling-injection QD laser In the Stranski-Krastanow self-assembling growth mode, a two-dimensional WL is initially grown followed by the formation of QDs. Due to thermal escape of carriers from QDs, there will be bipolar population and hence electron-hole recombination in the WL, even in a tunneling-injection structure. Since the opposite sides of a tunneling-injection structure are only connected by the current paths through QDs, and the WL is located in the n-side of the structure, the only source of holes for the WL is provided by QDs. It is shown that, due to the zero-dimensional nature of QDs, the rate of the hole supply to the WL remains limited with increasing injection current. For this reason, as in the other parts of the structure outside QDs (QWs and optical confinement layer), the parasitic electron-hole recombination remains restricted in the WL. As a result, even in the presence of the WL, the LCC of a tunneling-injection QD laser becomes increasingly linear at high injection currents, which is a further demonstration of the potential of such a laser for high-power operation. / Ph. D.

The effect of different factors on the operating characteristics of a semiconductor quantum dot (QD) laser is studied. Specifically, the following topics are included in the dissertation: 1) Effect of carrier-density-dependent internal loss in the optical confinement layer (OCL) on the characteristic temperature. Internal optical loss in a QD laser couples the confined-carrier level occupancy in QDs to the free-carrier density in the OCL. Due to this coupling, which is controlled by the threshold condition, the free-carrier density is increased and more temperature-sensitive, and also the confined-carrier level occupancy becomes temperature-dependent. As a result, the characteristic temperature of a laser is considerably reduced. Carrier-density-dependent internal loss also sets an upper limit for operating temperatures of a QD laser and constrains the shallowest potential well depth and the smallest tolerable size of a QD at which the lasing can be attained. The dependences of the characteristic temperature, maximum operating temperature, and shallowest potential well depth on the parameters of the structure are obtained. At the maximum operating temperature or when any parameter of the structure is equal to its critical tolerable value, the characteristic temperature reduces to zero. 2) Effect of excited-states in QDs on the light-current characteristic (LCC). The carrier capture from the three-dimensional reservoir (optical confinement layer – OCL) into the QD ground-state and escape from the ground-state to the OCL are assumed to occur via the QD excited-state. Such a two-step capture places a fundamental limitation on ground-state lasing—the output power saturates at high injection currents. The saturation power is controlled by the transition time between the excited- and ground-state in a QD. The longest, cut-off transition time exists, beyond which no ground-state lasing is possible. The following characteristics are analyzed versus the injection current density and the transition time: occupancies of the ground- and excited-state, free carrier density in the OCL, threshold current density, number of stimulated photons emitted, output power, internal and external differential quantum efficiencies. 3) Effect of longitudinal spatial hole burning (SHB) and multimode lasing on the LCC. The number of modes is shown to remain limited with increasing injection current. The maximum number of modes that can oscillate in a QD laser is analytically estimated. While this number increases with increasing surface density of QDs or cavity length, it remains limited (first increases and then decreases) with increasing scatter in the QD-size. The critical tolerable values of the structure parameters are derived beyond which higher-order longitudinal modes can not oscillate. It is notable that, in addition to the maximum tolerable scatter, there also exists the minimum scatter in the QD-size for each higher-order mode to start lasing. The threshold currents and output powers of modes are computed numerically. The power of the main mode is reduced due to lasing of higher-order modes and spatially nonuniform carrier distribution. As a new mode turns on, kinks appear in the LCCs of existing modes. SHB reduces the total optical power of a laser and contributes to nonlinearity of the overall LCC. The effect is more significant when any of the structure parameters is close to its critical tolerable value. The LCC becomes more linear with improving QD-size uniformity or increasing surface density of QDs or cavity length. / Ph. D.

In this thesis, our primary objective was to theoretically analyze the real world modulation bandwidth of a DTI QD laser and this was done by analyzing the effect of out-tunneling leakage of carriers from QDs, and by analyzing the effect of electron-hole asymmetry on the device characteristics. We are confronted with the following results: 1) Effect of Out-Tunneling Leakage on Modulation Bandwidth in Double Tunneling Injection Quantum Dot Lasers To purely focus on this effect, the conditions of instantaneous carrier exchange between the OCL and QW (on each side of the structure) and tunneling injection into QDs are assumed and closed-form analytical expressions for modulation bandwidth are obtained. The relative decrease in modulation bandwidth, due to this effect, in a DTI QD laser (from plots of modulation bandwidth vs j on increasing wout) is then shown to be small, and at ranges of injection currents of operational interest, nearly negligible. Consequently, it is shown that the DTI laser is a robust device in terms of sensitivity to out-tunneling leakage i.e. much effort need not be paid in suppressing this phenomenon. 2) Effect of Electron-Hole Asymmetry on Modulation Bandwidth of Double Tunneling Injection Quantum Dot Lasers On analyzing the effect of electron-hole asymmetry on the device characteristics of a DTI QD laser, it can be noted (from plots of modulation bandwidth vs injection current) that there is no reduction in the maximum modulation bandwidth i.e. electron-hole asymmetry does not indicate a reduction in the effectiveness of such a DTI design. This is shown to occur as the maximum modulation bandwidth depends on both, the effective differential non-stimulated recombination time as well the photon lifetime in the optical cavity. The photon lifetime being much smaller than the former acts as the dominating factor, and hence we see no appreciable change in the maximum modulation bandwidth. In the course of this analysis, we also see that the actual condition i.e. that of electron hole asymmetry is closer, among the cases of symmetry, to symmetry assuming hole parameters rather than electron parameters. As such, in cases where electron-hole symmetry must be used (in order to facilitate numerical simplifications), a recommendation of this study is to use hole parameters instead. / Master of Science / In this age of internet and optical communications, semiconductor lasers have a profound impact on the way we interact with our world. They act as intermediaries converting digital signals into optical pulses (in order to be transmitted) and then back into digital code. Understandably, the maximum speed at which these lasers can encode and decode information limits the speed of this entire communication network. This speed can be defined as the modulation bandwidth. A new design, the double tunneling-injection (DTI) quantum dot (QD) laser shows considerable promise, however its modulation bandwidth under real world operating conditions was yet to be analyzed. The aim of this thesis was to then theoretically analyze the real world modulation bandwidth of this new semiconductor laser design. This was done by analyzing the effect of unwanted leakage of carriers (out-tunneling) from the active region (Quantum Dots), and by analyzing the effect of electron-hole asymmetry on the device characteristics. The relative decrease in modulation bandwidth, due to leakage of carriers, in a DTI QD laser is then shown to be nearly negligible. Consequently, it is shown that the DTI QD laser is a robust device in terms of sensitivity to out-tunneling leakage, i.e., much effort need not be paid in suppressing this phenomenon. On analyzing the effect of electron-hole asymmetry on the device characteristics of a DTI QD laser, it is shown that there is no reduction in the maximum modulation bandwidth, i.e., electron-hole asymmetry does not indicate a reduction in the effectiveness of such a design. Thus, this analysis reiterates the fact that DTI QD lasers indeed show incredible potential to drastically improve modulation bandwidth and must be investigated further.

No description available.

Yb-ion doped gain media have become the material of choice for reliable generation of ultrashort pulses at wavelength around 1 μm. At present, however, operation at high average power (>1 W) with sub-100 fs pulses still remains challenging. The efforts of developing an Yb-ion oscillator towards this goal, therefore, are the main focus of this thesis. In this work, the Yb:KGd(WO4)2 (Yb:KGW) crystals were chosen to serve as the gain media. To achieve high power operation, two fundamental issues have been carefully considered: 1) a new pumping scheme was proposed to alleviate the thermal issues in the Yb:KGW crystals; 2) a new method was introduced to characterize intracavity losses in the broadband Yb-ion oscillators. As a side effect observed during the optimization of the CW operation, simultaneous two-wavelength emission was also discussed. With the knowledge and experimental understanding of the fundamental issues in laser oscillators operated in the continuous-wave regime, the next step of this work demonstrated their operation in a pulsed regime. The dual action of the Kerr-lens and saturable absorber (KLAS) mode locking was proposed in this work and resulted in greatly enhanced laser performance. The laser delivered pulses with 67 fs duration at a repetition rate of 77 MHz. The average output power reached 3 W, which, to the best of our knowledge, is the highest average output power produced to date from the Yb-ion based bulk lasers with such a short pulse duration. The scalability of pulse energy and peak power was also demonstrated by reducing the repetition rate to either 36 MHz or 18 MHz. The cavity with the latter repetition rate produced 85 fs pulses with the pulse energy up to 83 nJ, which corresponds to a peak power as high as 1 MW. As required by many biomedical applications, the wavelength of the generated pulses (~1 μm) can be tuned in the near-infrared region by coupling them into an optical parametric oscillator (OPO). The feasibility of this approach was demonstrated in the last part of this thesis, through a thorough theoretical analysis of two OPO materials suitable for excitation at 1.04 μm.

This thesis describes a series of experiments that were undertaken to extend the limits of output power and wavelength coverage of optically pumped mid-infrared lasers. Initially, two new CW Raman lasers operating at wavelengths of 11.5 and 12.5 pm were developed. Maximum powers of 650 and 150 mW were produced, with pump powers of 11 and 3.3 W, respectively. The effect of the pump offset on the output power was then determined by measuring the efficiency of an NHg laser pumped at frequency offsets of 94 and 274 MHz. In lasers operating in pure NH3, the larger pump offset required a greater pump intensity to reach threshold, but efficiency increased with pump offset. Higher NH3 pressures could be used at larger pump offsets and the improved efficiency was attributed to reduced saturation effects at the higher operating pressures. Experiments carried out with NHg inversion lasers have greatly increased the output powers available at a large number of wavelengths in the 10 to.14 pm range. In a buffered NH3 mixture, the sR(5,0) transition was pumped on resonance. C^llis;o^r^s with either — or Ar buffer gases were effective in thermalizing the rotational populations in the v>2=1 vibrational level and producing gain on a wide range of frequencies. Output powers as large as 3.5 W on a single line and greater than 5 W multi-line were produced, at efficiencies of 20 and 30 % respectively. The number of lasing wavelengths increased substantially, as more than forty ortho-NH3 transitions were observed to lase in a grating-tuned cavity. The optical pumping technique was then used for the first time to produce line-tunable lasing on para-NH3 transitions. The sR(5,l) transition was pumped near resonance and 24 para-transst'lons were observed to lase. In total, lasing was achieved on 65 different transitions in 14NH3, with wavelengths of 10.3 to 13.8 pm. / Thesis / Master of Science (MSc)

Th. doct.--Electronique et communications--Paris--ENST, 1992. / Bibliogr. p. 227-231.

Thesis (M.S. in Applied Physics and M.S. in Electrical Engineering)--Naval Postgraduate School, December 2002. / Thesis advisor(s): William B. Colson, Phillip E. Pace. "AD-A411 177." Includes bibliographical references (p. 81-83). Also available online.

Thesis (M.S. in Applied Physics and M.S. in Electrical Engineering)--Naval Postgraduate School, December 2002. / Thesis advisor(s): William B. Colson, Phillip E. Pace. Includes bibliographical references (p. 81-83). Also available online.